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| Inchange Semiconductor Product Specification Silicon NPN Power Transistors DESCRIPTION With TO-220C package Collector-emitter sustaining voltage VCEO(sus)=400V(Min) Collector-emitter saturation voltage VCE(sat)=1.0V(Max.)@IC=3.0A,IB=0.6A Switching time-tf=1.0|I s(Max.)@IC=3.0A APPLICATIONS Designed for use in high-voltage ,highspeed ,power switching in inductive circuit, particularly suited for 115 and 220V switchmode applications such as switching regulator's ,inverters,,DC-DC and converter PINNING PIN 1 2 3 Base DESCRIPTION 2SC2335 Emitter Collector;connected to mounting base PARAMETER Absolute maximum ratings(Ta=25ae ) SYMBOL VCBO VCEO VEBO IC ICM IB PD Tj Tstg CHA IN Collector current E SEM NG Open base OND IC CONDITIONS TOR UC VALUE 500 400 7 7 15 3.5 UNIT V V V A A A W ae ae Collector-base voltage Collector-emitter voltage Open emitter Emitter-base voltage Open collector Collector current-peak Base current Total power dissipation Junction temperature Storage temperature TC=25ae 40 150 -50~150 THERMAL CHARACTERISTICS SYMBOL Rth j-C PARAMETER Thermal resistance junction to case MAX 3.125 UNIT ae /W Inchange Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25ae unless otherwise specified PARAMETER Collector-emitter sustaining voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Collector cut-off current Emitter cut-off current DC current gain DC current gain DC current gain CONDITIONS IC=3.0A ; IB1=0.6A,L=1mH IC=3A; IB=0.6A IC=3A; IB=0.6A VCB=400V ;IE=0 VCE=400V ;VBE(off)=-1.5V TC=125ae VEB=5V; IC=0 IC=0.1A ; VCE=5V IC=1.0A ; VCE=5V IC=3.0A ; VCE=5V 20 20 MIN 400 TYP. 2SC2335 SYMBOL V(SUS)CEO VCEsat VBEsat ICBO ICEX IEBO hFE-1 hFE-2 hFE-3 MAX UNIT V 1.0 1.2 10 10 5.0 10 80 80 |I |I |I V V A A mA A Switching times ton tstg tf Fall time Turn-on time INC L 30-60 Storage time E SEM ANG H K 40-80 OND IC 10 TOR UC 1.0 2.5 1.0 |I |I |I s s s VCC=150V;IC=3.0A; IB1=-IB2=600mA; RL=50| hFE-2 Classifications M 20-40 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SC2335 CHA IN E SEM NG OND IC TOR UC Fig.2 Outline dimensions (unindicated tolerance:A 0.10 mm) 3 Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC2335 CHA IN E SEM NG OND IC TOR UC 4 |
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